NIST works with industry and science to advance innovation and improve quality of life. We're looking for a Physicist to join our team! This notice is issued under direct-hire authority to recruit new talent to occupations for which NIST has a severe shortage of candidates.

Duties

As a Physicist on our team you will: Conduct modeling and simulation of material properties and electrical device characteristics for GaN- and SiC-based p-n junction diodes, Schottky diodes, and high-electron-mobility transistors (HEMT), utilizing technology-computer-aided design (TCAD) approach. Optimize model parameters for materials and devices to simulate and optimize the electrical performance of devices of interest. In parallel with the modeling efforts, conduct microstructural, optical, and electrical measurements on GaN and SiC thin film heterostructures and devices and cross-correlate experimental and computer-simulated results to validate and optimize material and device TCAD model parameters. Present and publish experimental and modeling results as appropriate.

Requirements

• U.S. citizenship
• Males born after 12-31-59 must be registered for Selective Service
• Suitable for Federal employment
• Bargaining Unit Position: No

Qualifications

Individual Occupational Requirements Basic Requirements: 1. Degree: physics; or related degree that included at least 24 semester hours in physics. OR 2. Combination of education and experience -- courses equivalent to a major in physics totaling at least 24 semester hours, plus appropriate experience or additional education. In either A or B above, the courses must have included a fundamental course in general physics and, in addition, courses in any two of the following: electricity and magnetism, heat, light, mechanics, modern physics, and sound. In addition to the basic requirements, applicants must also have 1 year (52 weeks) of specialized experience equivalent to at least the GS-9 (ZP-II at NIST) level. Specialized Experience is defined as experience on Fabrication and processing of semiconductor materials and device structures; experience with optical spectroscopy methods in the IR- to UV- range, including ultra-fast spectroscopy techniques; experience with electrical transport measurements from cryo- to ambient temperatures and in high magnetic fields; computer simulations of semiconductor materials and devices using TCAD software packages (e.g., Sentaurus Device by Synopsys). OR Master's or equivalent graduate degree as defined in the basic requirements. OR A combination of graduate education and specialized experience as defined in the additional requirements Experience refers to paid and unpaid experience, including volunteer work done. We will credit all qualifying volunteer experience in your application. The qualification requirements in this vacancy announcement are based on the U.S. Office of Personnel Management (OPM) Qualification Standards Handbook. Applicant Reconsideration

Education

Transcripts must be submitted to validate that the education requirement has been met. Unofficial transcripts will be accepted in the application package. However, an official copy will be required prior to a final offer of employment.

Education completed outside of the U.S. must be evaluated by an accredited organization to ensure that it is comparable to education received in accredited institutions in the U.S. Click here to view a listing of accredited organizations from the Department of Education's website. A copy of the foreign education evaluation (containing the results with a course by course listing) is required with your application.

Contacts

• Address Materials Science and Engineering Division 100 Bureau Drive Gaithersburg, MD 20899 US
• Name: Evelyn Carter-Hopkins
• Phone: 000-000-0000
• Email: [email protected]