The Department of Commerce ranked top 5 in the 2023 Best Places to Work in the Federal Government amongst large agencies for the 12th year in a row! The ranking showcases the Department's continued commitment to increasing our employee engagement, employee satisfaction, and positive perceptions towards diversity, equity, accessibility, and inclusion. This notice is issued under direct-hire authority to recruit new talent to occupations for which NIST has a severe shortage of candidates.

Duties

The Nanoscale Device Characterization Division (NDCD) transforms nano- and atom-scale technologies by advancing measurement science and fundamental knowledge. The Division's mission is to develop and advance the measurement and knowledge infrastructure to characterize nano- and atom-scale engineered materials and solid-state devices for innovation in information processing, sensing, and future quantum technologies. As the new, Physicist on our team you will: Assist with developing new metrologies to test chip-to-chip bonds. Research and develop bond metrology for chip-to-chip bonding primarily using photoemission electron microscopy-based and optical-based measurements to determine pre-bonding parameters and bonding mechanisms. Fabricate and develop test structures to assess surface chemical structure. Communicate and collaborate with team members, other NIST teams, and external teams. Plan and carry out tasks with limited supervision. Present and publish results as appropriate.

Requirements

• U.S. citizenship
• Males born after 12-31-59 must be registered for Selective Service
• Suitable for Federal employment
• Bargaining Unit Position: No

Qualifications

Individual Occupational Requirements Basic Requirements: Degree: physics; or related degree that included at least 24 semester hours in physics. OR Combination of education and experience -- courses equivalent to a major in physics totaling at least 24 semester hours, plus appropriate experience or additional education. In either 1 or 2 above, the courses must have included a fundamental course in general physics and, in addition, courses in any two of the following: electricity and magnetism, heat, light, mechanics, modern physics, and sound. In addition to the basic requirements, applicants must also have 1 year (52 weeks) of specialized experience equivalent to at least the GS-9 (ZP-II at NIST) level. Specialized Experience is defined as experience in photoelectron microscopy; experience in low energy electron microscopy; AND experience with investigating gallium arsenide (GaAs), gallium nitride (GaN), or gallium oxide (Ga2O3) semiconductors. OR Master's or equivalent graduate degree as defined in the basic requirements. OR A combination of graduate education and specialized experience as defined in the additional requirements. Experience refers to paid and unpaid experience, including volunteer work done. We will credit all qualifying volunteer experience in your application. The qualification requirements in this vacancy announcement are based on the U.S. Office of Personnel Management (OPM) Qualification Standards Handbook. Applicant Reconsideration

Education

This position has an education requirement. Transcripts must be submitted to validate that the education requirement has been met. Unofficial transcripts will be accepted in the application package. However, an official copy will be required prior to a final offer of employment.

Education completed outside of the U.S. must be evaluated by an accredited organization to ensure that it is comparable to education received in accredited institutions in the U.S. Click here to view a listing of accredited organizations from the Department of Education's website. A copy of the foreign education evaluation (containing the results with a course by course listing) is required with your application.

Contacts

• Address Nanoscale Device Characterization Division 100 Bureau Drive Gaithersburg, MD 20899 US
• Name: Tailor Thompson
• Email: [email protected]